This product complies with the RoHS Directive (EU 2002/95/EC).
Zener Diodes
MAZTxxxH Series
Silicon planar type
For surge absorption circuit
■ Package
■ Features
•
•
•
Two elements anode-common type
Power dissipation PD : 150 mW
Pin Name
SSMini3-F2
Pin Name
1: Cathode 1
2: Cathode 2
3: Anode
•
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Power dissipation *
Junction temperature
Storage temperature
Symbol
PD
Rating
150
Unit
mW
°C
■ Marking Symbol
Refer to the list of the electrical characteristics
Tj
150
Tstg
−55 to +150
°C
within part numbers
Note) : PD = 150 mW achieved with a printed circuit board.
*
■ Internal Connection
3
1
2
■ Common Electrical Characteristics Ta = 25°C 3°C
Parameter
Zener voltage*
Symbol
VZ
Conditions
Min
Typ
Max
Unit
V
IZ
Specified value
Specified value
Specified value
Specified value
Refer to the list of the
electrical characteristics
within part numbers
Zener rise operating resistance
Zener operating resistance
Reverse current
RZK
RZ
IZ
Ω
IZ
Ω
IR
VR
µA
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Electrostatic breakdown voltage: 10 kV
Test method: IEC1000-4-2 (C = 150 pF, R = 330 Ω, Contact discharge: 10 times)
3. *: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
VZ guaranted 20 ms after current flow.
Publication date: August 2008
SKE00013FED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
MAZTxxxH Series
SSMini3-F2
Unit: mm
0.12 +0.05
−0.02
0.28 0.05
3
2
1
0.28 0.05
(0.51)
(0.51)
(0.80)
(0.80)
0.60 +0.05
−0.03
+0.05
−0.03
1.60
SKE00013FED
3
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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
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